Advances in InP HEMT technology for high frequency applications

Author

Smith, P.M. ; Nichols, K. ; Kong, W. ; MtPleasant, L. ; Pritchard, D. ; Lender, R. ; Fisher, J. ; Actis, R. ; Dugas, D. ; Meharry, D. ; Swanson, A.W.

Author_Institution

BAE SYSTEMS, Nashua, NH, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

7

Lastpage

10

Abstract

This paper presents an overview of the rapid progress being made in the development of InP HEMT devices and circuits for high frequency analog applications. Although widespread use of InP HEMTs has to date been limited by their comparatively high cost, commercialization now appears to be inevitable due to recent progress on two parallel fronts-the development of metamorphic HEMTs (MHEMTs) and the scaling of InP substrates to larger sizes (4- and 6-inch).

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; high electron mobility transistors; indium compounds; microwave field effect transistors; 4 inch; 6 inch; InP; InP HEMT technology; InP substrate scaling; MMIC low noise amplifiers; commercialization; high frequency analog applications; low noise properties; metamorphic HEMTs; optoelectronic applications; power amplification; Capacitive sensors; Costs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; PHEMTs; Temperature; Thermal conductivity; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964334

Filename

964334