Application of silicon-germanium technology for wireless handsets: a CDMA tri-mode chip set

Author

Barlas, D.

Author_Institution

Wireless Commun. Div., TriQuint Semicond., Boston, MA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

29

Lastpage

32

Abstract

SiGe technology has been evolving over the last decade and a half (Patton et al, 1990; Schuppen et al, 1995; Kasper et al, 1993; Schuppen et al, 1998; Barlas et al, 1999.). During the last few years, there has been much debate with regard to the pros and cons and viability of SiGe based RF devices for wireless applications. This paper describes the design, development and performance of an IS 95/98 dual band tri-mode chip-set using commercially available SiGe bipolar and BiCMOS foundry processes.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; code division multiple access; integrated circuit design; mobile radio; radio receivers; radio transmitters; semiconductor materials; transceivers; CDMA tri-mode chip set; IS 95/98 dual band tri-mode chip-set; SiGe; SiGe BiCMOS foundry processes; SiGe bipolar foundry processes; SiGe technology; of SiGe based RF devices; receive chain; silicon-germanium technology; transmit chain; wireless applications; wireless handsets; Circuits; Costs; Germanium silicon alloys; Linearity; Multiaccess communication; Personal communication networks; Power amplifiers; Radio frequency; Silicon germanium; Telephone sets;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964338

Filename

964338