A MEMS digital mirror array integrated with high-voltage level-shifter

Author

Maruyama, S. ; Takahashi, K. ; Fujita, H. ; Toshiyoshi, H.

Author_Institution

Inst. of Ind. Sci., Univ. of Tokyo, Tokyo, Japan

fYear

2009

fDate

21-25 June 2009

Firstpage

2314

Lastpage

2317

Abstract

This paper reports the design, fabrication and demonstration of MEMS electrostatic digital mirror array (8 channels) integrated with 40 V level-shifter drivers by the CMOS-first MEMS-last processing technique. A CMOS chip of high voltage level-shifter array (2.9 mm times 2.9 mm) was pre-fabricated on an 8-mum-thick SOI wafer, and micromechianical structures were post-processed by deep reactive ion etching (DRIE) in the nearby reticle area for monolithic integration. The mirror array has been developed for a fiber-optic wavelength selective switch (WSS) application.

Keywords

CMOS integrated circuits; micromechanical devices; micromirrors; CMOS chip; DRIE; MEMS electrostatic digital mirror array; SOI wafer; deep reactive ion etching; fiber-optic wavelength selective switch; high-voltage level-shifter drivers; micromechianical structures; monolithic integration; reticle area; size 2.9 mm; size 8 mum; voltage 40 V; Electrostatics; Etching; Fabrication; Integrated circuit interconnections; Micromechanical devices; Mirrors; Resists; Silicon on insulator technology; Switches; Voltage; CMOS-MEMS; electrostatic actuator; micro mirror;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International

Conference_Location

Denver, CO

Print_ISBN

978-1-4244-4190-7

Electronic_ISBN

978-1-4244-4193-8

Type

conf

DOI

10.1109/SENSOR.2009.5285899

Filename

5285899