DocumentCode
1864342
Title
Acoustic band gap-enabled high-Q micro-mechanical resonators
Author
Mohammadi, S. ; Eftekhar, A.A. ; Hunt, W.D. ; Adibi, A.
Author_Institution
Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2009
fDate
21-25 June 2009
Firstpage
2330
Lastpage
2333
Abstract
We report high-quality factor (e.g., more than 6,000) silicon resonators operating at high frequencies (~130 MHz) based on phononic crystals which are a new class of materials with artificially-engineerable phononic (or acoustic) properties. The resonators use the complete acoustic (or phononic) band gap of the designed crystal and are fabricated using a CMOS-compatible micromachining technology. As it will be discussed in this paper, these proof-of-concept phononic crystal resonators show the great potential of phononic crystal structures for efficiently confining and manipulating mechanical energy at the micrometer and nanometer length scales to surpass the performance of the conventional micromechanical devices used in wireless communication and sensing systems.
Keywords
CMOS integrated circuits; Q-factor; micromachining; micromechanical resonators; phononic crystals; silicon; CMOS compatible micromachining; Si; acoustic band gap; high quality factor; mechanical energy; micromechanical devices; micromechanical resonators; phononic crystal resonators; sensing systems; silicon resonators; wireless communication; Acoustic materials; CMOS technology; Crystalline materials; Crystals; Frequency; Mechanical energy; Micromachining; Nanoscale devices; Photonic band gap; Silicon; Phononic crystals; acoustic band gap; acoustic crystals; micromechanical resonators; phononic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location
Denver, CO
Print_ISBN
978-1-4244-4190-7
Electronic_ISBN
978-1-4244-4193-8
Type
conf
DOI
10.1109/SENSOR.2009.5285903
Filename
5285903
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