A 12-channel 2.5 Gb/s receiver IC for parallel optical interconnect

Author

Mayampurath, Balagopal ; Wu, Adam ; Armstrong, Allan

Author_Institution

Vitesse Semicond. Corp., Camarillo, CA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

57

Lastpage

60

Abstract

A 12-channel, 2.5 Gb/s, receiver IC for parallel optical interconnect is described. Each channel contains a Metal-Semiconductor-Metal Photodetector (MSM PD), Transimpedance Amplifier (TIA), Limiting Amplifier (LA), Output Buffer (OB) and Loss of Signal Detector (LOS). The chip was designed and fabricated in a 0.4 /spl mu/m GaAs MESFET process. Using a 3.3 V power supply, the chip typically consumes 600 mA, and each channel provides 400 mV differential outputs for input optical power more than -20 dBm. Typical single channel sensitivity is -19.5 dBm. Details of the chip design and layout and measured results are presented.

Keywords

III-V semiconductors; MESFET integrated circuits; digital communication; gallium arsenide; integrated circuit design; integrated optoelectronics; metal-semiconductor-metal structures; optical interconnections; optical receivers; photodetectors; 0.4 micron; 12-channel receiver; 2.5 Gbit/s; 3.3 V; 400 mV; 600 mA; GaAs MESFET process; MSM photodetector; chip design; chip layout; differential outputs; limiting amplifier; loss of signal detector; optical receiver IC; output buffer; parallel optical interconnect; transimpedance amplifier; Detectors; Gallium arsenide; Optical amplifiers; Optical buffering; Optical interconnections; Optical losses; Optical receivers; Photodetectors; Photonic integrated circuits; Signal detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964346

Filename

964346