Long wavelength graded bandgap light emitting diodes fabricated using a laser annealing process

Author

Kowalski, O.P. ; McDougall, S.D. ; Marsh, J.H. ; Aitchison, I.S.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1999

fDate

28-28 May 1999

Firstpage

137

Abstract

Summary form only given. Broad optical bandwidth light emitting diodes (LEDs) operating around 1.55 /spl mu/m have a host of potential applications such as sources in wavelength division multiplexing (WDM) systems, or as diagnostic tools for WDM components such as gratings or phased array waveguides. Here we present the realisation of a ridge waveguide LED from multiple quantum well (MQW) InGaAs-InAlGaAs material where the band-edge of the material was graded laterally along the ridge to produce a broadened electro-luminescence spectrum.

Keywords

aluminium compounds; gallium arsenide; gradient index optics; indium compounds; laser beam annealing; light emitting diodes; quantum well devices; ridge waveguides; semiconductor superlattices; 1.55 mum; InGaAs-InAlGaAs; LEDs; MQW; band-edge; broad optical bandwidth light emitting diodes; broadened electro-luminescence spectrum; graded band edge; laser annealing process; long wavelength graded bandgap light emitting diodes; multiple quantum well; ridge waveguide LED; Arrayed waveguide gratings; Bandwidth; Light emitting diodes; Optical arrays; Optical devices; Optical waveguides; Phased arrays; Photonic band gap; Stimulated emission; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833991

Filename

833991