Wafer-bonded InGaAlP/AuBe/glass light-emitting diodes

Author

Horng, R.H. ; Wuu, D.S. ; Tseng, H.W. ; Wei, S.C. ; Huang, Henry F. ; Chang, K.H. ; Liu, P.H. ; Lin, Kate Ching-Ju

Author_Institution

Inst. of Electr. Eng., Da-Yeh Univ., Chung-Hwa, China

fYear

1999

fDate

28-28 May 1999

Firstpage

137

Lastpage

138

Abstract

Summary form only given. High-brightness visible light-emitting diodes (LEDs) are becoming increasingly important and have numerous potential applications, such as in the field of optical display systems. The quaternary In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P alloys, which are lattice matched to GaAs, have a direct band-gap that ranges from 1.88 to 2.3 eV. InGaAlP is expected to be a promising candidate in high brightness visible LEDs. One of the problems in the InGaAlP LEDs grown on GaAs substrates was a restriction of light extraction efficiency caused by light absorption in the GaAs substrate. The effect of an absorbing layer or substrate can be minimized by two methods: one is growing a Bragg reflector between the standard LED epitaxial layers and the absorbing GaAs substrate, and the other is wafer bonding technology.

Keywords

Bragg gratings; III-V semiconductors; aluminium compounds; beryllium alloys; energy gap; gallium arsenide; gallium compounds; gold alloys; indium compounds; light emitting diodes; mirrors; optical constants; wafer bonding; 1.88 to 2.3 eV; Bragg reflector; GaAs; InGaAlP LEDs; InGaAlP-GaAs-AuBe; LEDs; absorbing GaAs substrate; direct band-gap; high brightness visible LEDs; high-brightness visible light-emitting diodes; light extraction efficiency; quaternary In/sub 0.5/(Ga/sub 1-x/Al/sub x/)/sub 0.5/P alloys; wafer bonding technology; wafer-bonded InGaAlP/AuBe/glass light-emitting diodes; Aluminum alloys; Brightness; Displays; Gallium alloys; Gallium arsenide; Glass; Lattices; Light emitting diodes; Photonic band gap; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833992

Filename

833992