Dual-band multi-mode power amplifier module using a third generation HBT technology

Author

Savary, P. ; Girardot, A. ; Montoriol, G. ; Dupis, F. ; Thibaud, B. ; Jaoui, R. ; Chapoux, L. ; Esnault, V. ; Cornibert, L. ; Izumi, O. ; Hill, D. ; Sadaka, M. ; Henry, H. ; Yu, E. ; Tutt, M. ; Majerus, M. ; Uscola, R. ; Clayton, F. ; Rampley, C. ; Klingb

Author_Institution

Wireless & Broadband Syst. Group, Motorola Semicond. Products Sector, Tempe, AZ, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

71

Lastpage

74

Abstract

A heterojunction bipolar transistor (HBT) technology utilizing InGaP/GaAs and carbon-doped base has been established in Motorola\´s high-volume 6" GaAs facility. The technology has been used to develop an integrated dual band (824-849 MHz and 1850-1910 MHz) power amplifier IC with multi-mode operation for 2.5G portable wireless. Both three-stage amplifiers have 30 dB gain, and provide an EDGE (8-PSK) signal at 28 dBm, an NADC signal at 30 dBm, and a GMSK signal at 32 dBm in their respective frequency bands, using a single 3.5 V source. All matching elements external to the chip are included in a low cost epoxy substrate which is 9/spl times/12/spl times/1.6 mm/sup 3/. Prospects of using this technology in W-CDMA applications have also been explored. A prototype achieves an ACPR of -41 dBc at 28 dBm output power with an efficiency of 36%.

Keywords

III-V semiconductors; UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; minimum shift keying; mobile radio; modules; phase shift keying; 1850 to 1910 MHz; 2.5G portable wireless; 3.5 V; 30 dB; 36 percent; 6 in; 8-PSK signal; 824 to 849 MHz; ACPR; EDGE signal; GMSK signal; InGaP-GaAs:C; InGaP/GaAs heterojunction bipolar transistor; NADC signal; W-CDMA; carbon-doped base; efficiency; epoxy substrate; integrated dual-band power amplifier module; matching element; multi-mode operation; output power; third generation HBT technology; three-stage amplifier; Costs; Dual band; Frequency; Gain; Gallium arsenide; Heterojunction bipolar transistors; Multiaccess communication; Operational amplifiers; Power amplifiers; Prototypes;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964349

Filename

964349