Analysis of antimony doped SnO2 thin film by synchrotron grazing incidence X-Ray diffraction

In recent years, transparent conductive oxides (TCO) films have been widely used for solar cell due to its high transmittance, low sheet resistance and texture structure that could increase the efficiency. The purpose of this study is to analyze the amount of antimony doped in tin oxide thin films by synchrotron radiation grazing incidence X-Ray diffraction (GIXRD), which is a non-destructive testing method to measure the variations in lattice constant due to the doped antimony atoms. The physical properties, such as resistivity, hall mobility, carrier concentration, transmittance, haze were measured to discuss the enhancement from the dopants. The result of this research showed that the resistivity of the film was 1.4 × 10^-3 Ω-cm and the average transmittance from 400 nm to 800 nm could reach 89.3% with the doping of antimony.