40 Gbit/sec circuits built from a 120 GHz f/sub T/ SiGe technology

Author

Freeman, G. ; Kwark, Y. ; Meghelli, M. ; Zier, S. ; Rylyakov, A. ; Sorna, M. ; Tanji, T. ; Schreiver, O. ; Walter, K. ; Rieh, J. ; Jagannathan, B. ; Joseph, A. ; Subbanna, S.

Author_Institution

IBM Microelectron., Hopewell Junction, NY, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

89

Lastpage

92

Abstract

Product designs for 40 Gbit/sec applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will briefly discuss technology aspects relating to HBT device operation at high speed, acting to dispel some common misconceptions regarding SiGe HBT technology applicability to 40 Gbit/sec circuits. The high speed portions of the 40 Gbit/sec system are then addressed individually, demonstrating substantial results toward product offerings, on each of the critical high speed elements.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; demultiplexing equipment; distributed amplifiers; heterojunction bipolar transistors; high-speed integrated circuits; modulators; multiplexing equipment; phase locked loops; semiconductor materials; voltage-controlled oscillators; 40 Gbit/s; 40 Gbit/s circuit applications; BiCMOS technologies; PLL circuits; SiGe; SiGe HBT technology; VCO; amplifiers; demultiplexing circuits; modulator driver; multiplexing circuits; oscillators; Bit rate; Circuits; Current density; Delay; Germanium silicon alloys; Predictive models; Silicon germanium; Technology management; Temperature; Thermal management;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964353

Filename

964353