Title :
40 Gbit/sec circuits built from a 120 GHz f/sub T/ SiGe technology
Author :
Freeman, G. ; Kwark, Y. ; Meghelli, M. ; Zier, S. ; Rylyakov, A. ; Sorna, M. ; Tanji, T. ; Schreiver, O. ; Walter, K. ; Rieh, J. ; Jagannathan, B. ; Joseph, A. ; Subbanna, S.
Author_Institution :
IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
Product designs for 40 Gbit/sec applications fabricated from SiGe BiCMOS technologies are now becoming available. This paper will briefly discuss technology aspects relating to HBT device operation at high speed, acting to dispel some common misconceptions regarding SiGe HBT technology applicability to 40 Gbit/sec circuits. The high speed portions of the 40 Gbit/sec system are then addressed individually, demonstrating substantial results toward product offerings, on each of the critical high speed elements.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; demultiplexing equipment; distributed amplifiers; heterojunction bipolar transistors; high-speed integrated circuits; modulators; multiplexing equipment; phase locked loops; semiconductor materials; voltage-controlled oscillators; 40 Gbit/s; 40 Gbit/s circuit applications; BiCMOS technologies; PLL circuits; SiGe; SiGe HBT technology; VCO; amplifiers; demultiplexing circuits; modulator driver; multiplexing circuits; oscillators; Bit rate; Circuits; Current density; Delay; Germanium silicon alloys; Predictive models; Silicon germanium; Technology management; Temperature; Thermal management;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964353
