Title :
Novel technique for evaluation of optical confinement in semiconductor lasing structures through spatially and spectrally resolved emission spectra
Author :
Bidnyk, S. ; Schmidt, T.J. ; Little, B.D. ; Krasinski, J. ; Song, J.J.
Author_Institution :
Dept. of Phys., Oklahoma State Univ., Stillwater, OK, USA
Abstract :
Summary form only given. At present, the main focus of III-V nitride research is the optimization of current-injected laser diodes in order to achieve a low lasing threshold and extend the lifetime of working devices. Whereas a significant amount of work has been dedicated to such issues as the choice of substrate, facet formation, measurement of far-field emission patterns, as well as the study of temperature effects on lasing characteristics, the subject of optical confinement has not been adequately addressed. In this work we introduce a novel technique for investigation of optical confinement in GaN-based lasing structures, which utilizes both high spatial and spectral resolution of sample emission.
Keywords :
III-V semiconductors; gallium compounds; semiconductor lasers; ultraviolet spectra; visible spectra; wide band gap semiconductors; 10 ns; 308 nm; GaN; GaN-based lasing structures; current-injected laser diodes; emission spectra; facet formation; far-field emission patterns,; low lasing threshold; optical confinement; semiconductor lasing structures; substrate; temperature effects; Focusing; Gallium nitride; Image analysis; Microscopy; Optical refraction; Optical surface waves; Optical variables control; Spatial resolution; Spectroscopy; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834005
