Spectroscopic measurement of packaging induced strains in high-power laser diode arrays

Summary form only given. High-power diode lasers are important for a wide range of applications, e.g. as pump sources for solid state lasers and tools for material processing. For managing the thermal load connected with high power operation, complex device and heat sink architectures are required. In particular, the semiconductor structure must be mounted ´p-side down´ on a heat sink of high thermal conductivity. In such a geometry, mechanical strain of the active region represents a central issue, affecting both the parameters of laser emission and the lifetime of the device.