• DocumentCode
    1864588
  • Title

    1-W 1:16 DEMUX and one-chip CDR with 1:4 DEMUX for 10 Gbit/s optical communication systems

  • Author

    Ishii, K. ; Nosaka, H. ; Nakajima, H. ; Kurishima, K. ; Ida, M. ; Watanabe, N. ; Yamane, Y. ; Sano, E. ; Enoki, T.

  • Author_Institution
    NTT Photonics Labs., NTT Corp., Kanagawa, Japan
  • fYear
    2001
  • fDate
    21-24 Oct. 2001
  • Firstpage
    101
  • Lastpage
    105
  • Abstract
    Using InP/InGaAs heterojunction bipolar transistor (HBT) technology, we have successfully designed and fabricated a low power 1:16 demultiplexer (DEMUX) IC and one-chip clock and data recovery (CDR) with a 1:4 DEMUX IC for 10 Gbit/s optical communication systems. The HBTs were fabricated by a non-self-aligned process to achieve high productivity and uniformity of device characteristics. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consist of approximately 1200 and 460 transistors, respectively. We have confirmed error-free operation at 10 Gbit/s for all data outputs of both ICs. The 1:16 DEMUX IC and the one-chip CDR with the 1:4 DEMUX IC consume only 1 W and 950 mW, respectively. These results demonstrate the feasibility of InP/InGaAs HBTs for low-power, high-integration optical communication ICs.
  • Keywords
    III-V semiconductors; bipolar digital integrated circuits; demultiplexing equipment; gallium arsenide; heterojunction bipolar transistors; indium compounds; low-power electronics; optical communication equipment; synchronisation; 1 W; 10 Gbit/s; 950 mW; InP-InGaAs; InP/InGaAs heterojunction bipolar transistor technology; demultiplexer; low-power IC; nonself-aligned process; one-chip clock and data recovery; optical communication system; Bipolar integrated circuits; Clocks; Error-free operation; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical design; Optical fiber communication; Photonic integrated circuits; Productivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
  • Conference_Location
    Baltimore, MD, USA
  • ISSN
    1064-7775
  • Print_ISBN
    0-7803-6663-8
  • Type

    conf

  • DOI
    10.1109/GAAS.2001.964356
  • Filename
    964356