Title :
Extremely high P1dB MMIC amplifiers for Ka-band applications
Author :
Lai, R. ; Grundbacher, R. ; Barsky, M. ; Oki, A. ; Siddiqui, M. ; Pitman, B. ; Katz, R. ; Tran, P. ; Callejo, L. ; Streit, D.
Author_Institution :
Semicond. Products Center, TRW Inc., Redondo Beach, CA, USA
Abstract :
In this paper we describe single stage and two-stage MMIC power amplifier data at Ka-band. An extremely high P1dB power density of 700 mW/mm and 571 mW/mm were measured for the 1-stage and 2-stage GaAs HEMT MMIC amplifiers respectively. When biased for optimal IP3, 4.5 W/mm and 2.1 W/mm were achieved respectively. The performance of the latter 2-stage MMIC PA is achieved in a very compact design of 4.08 mm/sup 2/ total MMIC area. These are believed to be among the best numbers reported for linear power amplifiers at Ka-band.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; field effect MMIC; gallium arsenide; 0.15 micron; 24 to 30 GHz; GaAs; GaAs HEMT power amplifier; Ka-band applications; MMIC power amplifiers; P1dB power density; compact design; linear power amplifiers; optimal IP3 biasing; power amplifier performance; single stage power amplifier; two-stage power amplifier; Chirp modulation; Cutoff frequency; Gallium arsenide; HEMTs; High power amplifiers; Linearity; MMICs; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964359
