DocumentCode :
1864684
Title :
A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers
Author :
Masuda, S. ; Hirose, T. ; Yokokawa, S. ; Nishi, M. ; Iijima, S. ; Ono, K. ; Watanabe, Y.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fYear :
2001
fDate :
21-24 Oct. 2001
Firstpage :
118
Lastpage :
123
Abstract :
We developed for the first time a flip-chip multi-layer MMIC design technology that is based on thin-film inverted microstrip lines for use in low-cost W-band transceivers. This technology enables the minimization of chip size and the realization of a practical MMIC design, including the assembly issues in the W-band. A fabricated receiver amplifier occupying an area 1.5/spl times/0.35 mm experimentally achieved a gain of 27 dB and the transmitter power amplifier exhibited an output power of 14.5 dBm at 76 GHz, respectively. To our knowledge, this is the highest value ever reported at this frequency for a flip-chip multilayer MMIC amplifier.
Keywords :
MMIC amplifiers; flip-chip devices; microstrip circuits; millimetre wave amplifiers; transceivers; 27 dB; 76 GHz; W-band transceiver; flip-chip MMIC design technology; multilayer transmission line; receiver amplifier; thin film inverted microstrip line; transmitter power amplifier; Assembly; Gain; MMICs; Microstrip; Power amplifiers; Power transmission lines; Transceivers; Transistors; Transmission lines; Transmitters;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-6663-8
Type :
conf
DOI :
10.1109/GAAS.2001.964360
Filename :
964360
Link To Document :
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