A new flip-chip MMIC technology with multi-layer transmission line structure for low-cost W-band transceivers

Author

Masuda, S. ; Hirose, T. ; Yokokawa, S. ; Nishi, M. ; Iijima, S. ; Ono, K. ; Watanabe, Y.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

118

Lastpage

123

Abstract

We developed for the first time a flip-chip multi-layer MMIC design technology that is based on thin-film inverted microstrip lines for use in low-cost W-band transceivers. This technology enables the minimization of chip size and the realization of a practical MMIC design, including the assembly issues in the W-band. A fabricated receiver amplifier occupying an area 1.5/spl times/0.35 mm experimentally achieved a gain of 27 dB and the transmitter power amplifier exhibited an output power of 14.5 dBm at 76 GHz, respectively. To our knowledge, this is the highest value ever reported at this frequency for a flip-chip multilayer MMIC amplifier.

Keywords

MMIC amplifiers; flip-chip devices; microstrip circuits; millimetre wave amplifiers; transceivers; 27 dB; 76 GHz; W-band transceiver; flip-chip MMIC design technology; multilayer transmission line; receiver amplifier; thin film inverted microstrip line; transmitter power amplifier; Assembly; Gain; MMICs; Microstrip; Power amplifiers; Power transmission lines; Transceivers; Transistors; Transmission lines; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964360

Filename

964360