Title :
InP D-HBT IC´s for 40 Gb/s and higher bitrate lightwave transceivers
Author :
Baeyens, Y. ; Georgiou, G. ; Weiner, J. ; Houtsma, V. ; Paschke, P. ; Lee, Q. ; Leven, A. ; Kopf, R. ; Frackoviak, J. ; Chen, C. ; Liu, C.T. ; Chen, Y.K.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
The combination of device speed (f/sub T/, f/sub max/>150 GHz) and breakdown voltage (V/sup bcco/ of about 10 V), makes the double heterojunction InP-based HBT (D-HBT), a very attractive technology to implement the most demanding analog functions of 40 Gb/s transceivers. This is illustrated by the performance of a number of InP D-HBT circuits including millimeter-wave low phase-noise VCO´s up to 146 GHz, low jitter 40 Gb/s limiting amplifiers, a 40 Gb/s driver amplifier with 4.5 V differential output swing and distributed pre-amplifiers with up to 1.4 THz gain-bandwidth.
Keywords :
III-V semiconductors; bipolar analogue integrated circuits; distributed amplifiers; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; millimetre wave amplifiers; millimetre wave oscillators; optical communication equipment; preamplifiers; semiconductor device breakdown; transceivers; voltage-controlled oscillators; 10 V; 146 GHz; 150 GHz; 40 Gb/s lightwave transceivers; 40 Gbit/s; InGaAs-InP; InP; InP D-HBT ICs; analog functions; breakdown voltage; device speed; differential output swing; distributed preamplifiers; double heterojunction InP-based HBT; driver amplifier; low jitter limiting amplifiers; mm-wave low phase-noise VCOs; Bit rate; Differential amplifiers; Distributed amplifiers; Driver circuits; Heterojunction bipolar transistors; Indium phosphide; Jitter; Millimeter wave circuits; Millimeter wave technology; Transceivers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964361
