A DC-45 GHz metamorphic HEMT traveling wave amplifier

Author

Leoni, R.E., III ; Lichwala, S.J. ; Hunt, J.G. ; Whelan, C.S. ; Marsh, P.F. ; Hoke, W.E. ; Kazior, T.E.

Author_Institution

Raytheon RF Components, Andover, MA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

133

Lastpage

136

Abstract

Metamorphic HEMT (MHEMT) technology is capable of providing InP based HEMT performance at GaAs based HEMT levels of manufacturability and cost. This makes the MHEMT an attractive alternative for low noise, high frequency, and wide bandwidth applications. The authors describe the performance of a DC-45 GHz MHEMT traveling wave amplifier (TWA) that is well suited for broadband applications such as 40 Gb/s fiber-optic receivers. The amplifier provides a typical noise figure of 2 dB and output powers in excess of 3 dBm.

Keywords

HEMT integrated circuits; III-V semiconductors; field effect MIMIC; gallium arsenide; indium compounds; optical receivers; travelling wave amplifiers; wideband amplifiers; 0 to 45 GHz; 16 dB; 2 to 2.5 dB; 40 Gbit/s; 45 GHz; GaAs; InGaAs; InGaAs MHEMT technology; MHEMT TWA; MHEMT traveling wave amplifier; broadband applications; fiber-optic receivers; metamorphic HEMT; wide bandwidth applications; Bandwidth; Broadband amplifiers; Costs; Frequency; Gallium arsenide; HEMTs; Indium phosphide; Manufacturing; Power amplifiers; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964363

Filename

964363