DocumentCode :
1864853
Title :
A Multi-Terminal Pressure Sensor with enhanced sensitivity
Author :
Coraucci, G.O. ; Finardi, M.R. ; Fruett, F.
Author_Institution :
Center for Semicond. Components (CCS), Univ. of Campinas (Unicamp), Campinas, Brazil
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
1122
Lastpage :
1125
Abstract :
This paper describes the design, microfabrication and characterization of a CMOS compatible multi-terminal pressure sensor (MTPS). This sensor is an alternative to the pressure sensors based on the conventional silicon Wheatstone piezoresistive bridge (WB) or four-terminal piezotransducers. The layout of the MTPS is designed in such a way that the sensor sensitivity is effectively improved and the short-circuit effects, which are modeled by the geometrical correction factor (G), can be minimized. The sensor design was supported by finite element method (FEM). The MTPS sensitivity amounts to 4,8 mV/psi.
Keywords :
CMOS integrated circuits; finite element analysis; microfabrication; pressure sensors; CMOS compatible multiterminal pressure sensor; FEM; Wheatstone piezoresistive bridge; finite element method; four-terminal piezotransducers; geometrical correction factor; microfabrication; pressure sensors; sensor sensitivity; short-circuit effects; Biomembranes; Conductivity; Current density; Geometry; Mechanical sensors; Piezoresistance; Sensor phenomena and characterization; Silicon; Stress; Voltage; CMOS Microsystem; Pressure sensor; high sensitivity; microelectronic; piezoresistive effect; short-circuit effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285927
Filename :
5285927
Link To Document :
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