DocumentCode :
1864870
Title :
Compound semiconductor physical device simulation for technology development at Motorola
Author :
Hartin, O.L. ; Ray, M. ; Li, P. ; Johnson, K.
Author_Institution :
Motorola Inc., Tempe, AZ, USA
fYear :
2001
fDate :
21-24 Oct. 2001
Firstpage :
163
Lastpage :
165
Abstract :
There is significant advantage to simulation-assisted device development in compound semiconductors At Motorola, 2D and 3D physics-based TCAD is heavily integrated into device development for communications. Effective simulation methods have been developed that allow us to reduce development cycle time, and cycles of learning to achieve cost competitive III-V market leading technologies. Our methodology includes analytical analysis, calibration to measured data, parameter study, and optimization of DC, small signal AC, RF, and thermal performance. This methodology has been used in pHEMT, HBT, and HIGFET development Application development, such as the pHEMT-based RF switch, has also used device simulation heavily. The fundamentals of this methodology will be discussed and examples from the technology areas will be presented.
Keywords :
III-V semiconductors; semiconductor device models; technology CAD (electronics); 2D TCAD; 3D TCAD; AC characteristics; DC characteristics; HBT; HIGFET; III-V compound semiconductor; Motorola technology; RF characteristics; RF switch; analytical analysis; calibration; communications applications; development cycle time; learning cycle; optimization; pHEMT; parameterization; physical device simulation; small-signal characteristics; thermal properties; Calibration; Costs; III-V semiconductor materials; Optimization methods; PHEMTs; Performance analysis; RF signals; Radio frequency; Signal analysis; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-6663-8
Type :
conf
DOI :
10.1109/GAAS.2001.964369
Filename :
964369
Link To Document :
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