Ultrafast photoconductive switches on a thin absorption layer fabricated by using an atomic force microscope

Author

Itatani, T. ; Eikkawa, H. ; Tanuma, Y. ; Matsumoto, Kaname ; Sugaya, Takeyoshi ; Nakagawa, T. ; Sugiyama, Youhei ; Yonei, K.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1999

fDate

28-28 May 1999

Firstpage

160

Lastpage

161

Abstract

Summary form only given. We have fabricated ultrafast photoconductive switches on a GaAs substrate using an atomic force microscope (AFM) based on anodic oxidation. We report the ultrafast photoconductive switches on a thin absorption layer of low-temperature-grown GaAs which is used to reduce the transit time of carriers.

Keywords

III-V semiconductors; aluminium compounds; anodisation; atomic force microscopy; gallium arsenide; high-speed optical techniques; optical fabrication; photoconducting switches; substrates; GaAs; GaAs substrate; GaAs-AlGaAs; anodic oxidation; atomic force microscope; carrier transit time; low-temperature-grown GaAs; thin absorption layer; transit time; ultrafast photoconductive switches; Absorption; Atomic layer deposition; Coplanar transmission lines; High speed optical techniques; Nonlinear optics; Optical fiber couplers; Optical pulse generation; Optical pumping; Photoconductivity; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834028

Filename

834028