Title :
High reliability of 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT MMICs on 3-inch InP production process
Author :
Chou, Y.C. ; Leung, D. ; Lai, R. ; Scarpulla, J. ; Barsky, M. ; Grundbacher, R. ; Eng, D. ; Liu, P.H. ; Oki, A. ; Streit, D.C.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
The high-reliability performance of K-band MMIC amplifiers fabricated using 0.1 /spl mu/m T-gate InGaAs/InAlAs/InP HEMTs on 3-inch wafers using a high volume production process is reported. Operating at an accelerated life test condition of V/sub ds/=1.2 V and I/sub ds/=150 mA/mm, two-stage balanced amplifiers were life tested at three temperatures (T/sub 1/=215/spl deg/C, T/sub 2/=230/spl deg/C and T/sub 3/=250/spl deg/C) in a N/sub 2/ ambient. The activation energy (E/sub a/) is as high as 2 eV, achieving a projected median-time-to-failure (MTF) >1/spl times/10/sup 8/ hours at a 125/spl deg/C junction temperature. MTF was determined by 3-temperature constant current stress using | /spl Delta/S21 | >1.0 dB as the failure criteria. This is the first demonstration of 3-temperature high reliability 0.1 /spl mu/m InGaAs/InAlAs/InP HEMT based on small-signal microwave characteristics of HEMT MMIC. This result demonstrates a robust InGaAs/InAlAs/InP HEMT production technology.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; differential amplifiers; failure analysis; field effect MMIC; gallium arsenide; indium compounds; integrated circuit reliability; integrated circuit testing; life testing; thermal stresses; 0.1 micron; 1.2 V; 100000000 hr; 125 C; 2 eV; 215 C; 230 C; 250 C; 3 in; HEMT MMIC; InGaAs-InAlAs-InP; InGaAs/InAlAs/InP HEMT MMICs; InP; InP production process; K-band MMIC amplifiers; N/sub 2/ accelerated life test ambient; T-gate InGaAs/InAlAs/InP HEMTs; accelerated life test condition; activation energy; failure criteria; high-reliability performance; junction temperature; life test temperatures; median-time-to-failure; reliability; robust InGaAs/InAlAs/InP HEMT production technology; small-signal microwave characteristics; three-temperature constant current stress; two-stage balanced amplifiers; volume production process; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; K-band; Life estimation; Life testing; MMICs; Production; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964372
