Title :
Evaluation of 4" InP(Fe) substrates for production of HBTs
Author_Institution :
Nortel Networks Opt. Components, Ottawa, Ont., Canada
Abstract :
Large-scale fabrication of heterojunction bipolar transistors (HBTs) for digital wireless, cellular and fiber optic telecommunication systems is creating a need for high quality, large diameter semi-insulating InP(Fe) substrate crystals. The purpose of this paper is to review the evolution and current state of commercially available 4" InP(Fe) substrates, compared to smaller substrates (Bliss, 1999) and compared to specifications for GaAs(SI) on resistivity, EPD, thickness, flatness and orientation.
Keywords :
III-V semiconductors; crystal growth from melt; crystal orientation; doping profiles; electrical resistivity; heterojunction bipolar transistors; indium compounds; iron; semiconductor growth; substrates; surface topography; 4 in; EPD; HBT production; HBTs; InP(Fe) substrates; InP:Fe; VGF; cellular telecommunication systems; digital wireless systems; fiber optic telecommunication systems; heterojunction bipolar transistors; large-scale fabrication; liquid encapsulated Czochralski growth; pressure controlled LEC growth; resistivity; semi-insulating InP(Fe) substrate crystals; specifications; substrate flatness; substrate orientation; substrate thickness; vertical gradient freeze; Conductivity; Crystals; Heterojunction bipolar transistors; Impurities; Indium phosphide; Iron; Manufacturing; Photoluminescence; Production; Tail;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964373
