Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with f/sub max/=425 GHz

Author

Lee, S. ; Kim, H.J. ; Urteaga, M. ; Krishnan, S. ; Wei, Y. ; Dahstrom, M. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

185

Lastpage

187

Abstract

We report InP/InGaAs/InP double heterojunction bipolar transistors (DHBT) with power gain cut-off frequency f/sub max/=425 GHz and current gain cut-off frequency f/sub t/=141 GHz using transferred-substrate technology. This is the highest reported f/sub max/ for a DHBT. The breakdown voltage BV/sub CEO/ is 8 V at J/sub C/=5/spl times/10/sup 4/ A/cm/sup 2/ and the DC current gain /spl beta/ is 43.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; millimetre wave bipolar transistors; semiconductor device breakdown; semiconductor device measurement; 141 GHz; 425 GHz; 8 V; DC current gain; InP-InGaAs-InP; InP/InGaAs/InP DHBT; breakdown voltage; current gain cut-off frequency; power gain cut-off frequency; transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors; transferred-substrate technology; Bandwidth; DH-HEMTs; Double heterojunction bipolar transistors; Electromagnetic heating; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Substrates; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964374

Filename

964374