DocumentCode :
1865073
Title :
Asymemetry in intermodulation distortion of HBT power amplifiers
Author :
Yu Wang ; Cherepko, S.V. ; Hwang, J.C.M. ; Feiyu Wang ; Jemison, W.D.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
fYear :
2001
fDate :
21-24 Oct. 2001
Firstpage :
201
Lastpage :
204
Abstract :
This work demonstrates the prediction of asymmetry in intermodulation distortion of HBT power amplifiers under two-tone excitation. While previous predictions were based on Volterra series in conjunction with a simple device model, the present approach is based on harmonic-balance simulation in conjunction with a nonlinear large-signal device model. The present approach is validated by the agreement between simulations and measurements under different bias, matching and input conditions as well as tone separations. The present result is consistent with the Volterra-series analysis of the effect of baseband termination impedance on the intermodulation asymmetry.
Keywords :
UHF power amplifiers; heterojunction bipolar transistors; intermodulation distortion; nonlinear network analysis; semiconductor device models; HBT power amplifiers; IMD asymmetry; VBIC HBT model; baseband termination impedance; bias conditions; harmonic-balance simulation; input conditions; intermodulation distortion; matching conditions; nonlinear large-signal device model; tone separations; two-tone excitation; Circuit simulation; Distortion measurement; Educational institutions; Electronic mail; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Intermodulation distortion; Power amplifiers; Predictive models;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-6663-8
Type :
conf
DOI :
10.1109/GAAS.2001.964378
Filename :
964378
Link To Document :
بازگشت