Broadband class-E power amplifier for space radar application

Author

Quach, T. ; Watson, P. ; Okamura, W. ; Kaneshiro, E. ; Gutierrez-Aitken, A. ; Block, T. ; Eldredge, J. ; Jenkins, T. ; Kehias, L. ; Oki, A. ; Sawdai, D. ; Welch, R. ; Worley, R.

Author_Institution

Air Force Res. Lab., Wright-Patterson AFB, OH, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

209

Lastpage

213

Abstract

We report on a broadband high efficiency power amplifier using Indium Phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. The amplifier demonstrated a record bandwidth for a class-E power amplifier at X-band. This circuit achieved 49-58% PAE, 18.5-23.9 dBm output power, and 9.6-10.5 dB gain across 9-11 GHz.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; heterojunction bipolar transistors; indium compounds; radar equipment; spaceborne radar; switching circuits; wideband amplifiers; 49 to 58 percent; 9 to 11 GHz; 9.6 to 10.5 dB; InP DHBT technology; X-band operation; broadband power amplifier; class-E power amplifier; double heterojunction bipolar transistor; high efficiency amplifier; space radar application; space-based radar systems; Bandwidth; Broadband amplifiers; Circuits; DH-HEMTs; Double heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Power amplifiers; Radar applications; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964380

Filename

964380