Comparisons of technologies and MMICS results for military needs

Author

Murgadella, F. ; Coulon, P. ; Moreau, C.

Author_Institution

French MoD, Paris, France

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

223

Lastpage

227

Abstract

During the last 3 years, the French MoD has supported technology developments and/or specific MMICs designs for power amplification from S-band to Ku-band (i.e. 18 GHz), for radar and electronic warfare applications. Our objective in this paper, is to present and analyse the results obtained on three X-band power amplifiers using different GaAs technologies and designs with a view to meeting the same specifications target. To our knowledge, this is the first time a concrete comparison is conducted on three different state-of-the art technologies, simultaneously taking into account, technology, reliability issues and microwave measurements of MMICs.

Keywords

HEMT integrated circuits; III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; bipolar MMIC; electronic warfare; field effect MMIC; gallium arsenide; heterojunction bipolar transistors; integrated circuit reliability; integrated circuit technology; military equipment; military radar; 18 GHz; EW applications; GaAs; GaAs technologies; MMIC designs; X-band power amplifiers; electronic warfare applications; microwave measurements; military applications; power amplification; radar applications; reliability issues; specifications target; Art; Concrete; Electronic warfare; Gallium arsenide; MMICs; Microwave measurements; Microwave technology; Power amplifiers; Radar applications; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964383

Filename

964383