• DocumentCode
    1865249
  • Title

    The large-area One-per-wafer ZTJ and ZTJM solar cells from Emcore

  • Author

    Cho, Benjamin ; Stan, M.A. ; Patel, P. ; Varghese, T. ; Ramirez, G. ; Aiken, D. ; Lutz, R. ; Fatemi, N. ; Sharps, P.

  • Author_Institution
    Emcore Photovoltaics, Albuquerque, NM, USA
  • fYear
    2011
  • fDate
    19-24 June 2011
  • Abstract
    The One-per-wafer denotes a single cell design for a large-area cell on a 100-mm diameter (4”) Ge wafer. As a result, the total area of this cell is on the order of ~60cm2, which is twice as large as most conventional two-per-wafer solar cells. The silicon bypass diode design for the One-per-wafer cell has successfully passed electrical screening after forward bias, reverse bias and electrical cycling tests. The ZTJM solar cell incorporates a monolithically integrated GaAs bypass diode, which has been redesigned for significantly improved Electrostatic Discharge (ESD) resistance, exhibiting no change in dark current-voltage (DIV) characteristics after 10 normal (64A, 1.8 μs) or 10 inverted gradient (30A, 100 μs) ESD pulses. Pilot production results show a median bare-cell AM0 conversion efficiency of 29.2% for the One-per-wafer design and 29.1% for the ZTJM.
  • Keywords
    III-V semiconductors; electrostatic discharge; elemental semiconductors; gallium arsenide; germanium; semiconductor diodes; silicon; solar cells; DIV characteristics; ESD resistance; Emcore; GaAs; Ge; Si; current 30 A; current 64 A; dark-current-voltage characteristics; efficiency 29.1 percent; efficiency 29.2 percent; electrical cycling test; electrical screening; electrostatic discharge resistance; forward-bias test; germanium wafer; large-area one-per-wafer ZTJM solar cells; median-bare-cell AM0 conversion efficiency; monolithically-integrated gallium arsenide bypass diode; reverse-bias test; silicon bypass diode design; single-cell design; size 100 mm; time 1.8 mus; time 100 mus; two-per-wafer solar cells; Electrostatic discharges; Photovoltaic cells; Production; Qualifications; Resistance; Semiconductor diodes; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
  • Conference_Location
    Seattle, WA
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-9966-3
  • Type

    conf

  • DOI
    10.1109/PVSC.2011.6186334
  • Filename
    6186334