Title :
Super low noise InGaP gated PHEMT
Author :
Huang, Hou Kuei ; Wang, Y.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
Very high performance InGaP/InGaAs/GaAs PHEMT is demonstrated. The fabricated InGaP gated PHEMT device with 0.25/spl times/160 /spl mu/m/sup 2/ of gate dimension shows a 304 mA/mm of saturation drain current at V/sub Gs/=0V, V/sub DS/=2 V and a 320 mS/mm of extrinsic transconductance. Noise figure at 12 GHz is measured to be 0.46 dB with a 13 dB associated gain. With such a high gain and low noise, the drain-to-gate breakdown can be as high as 10 V. Standard deviation in the threshold voltage of 22 mV across a 4-inch wafer can be achieved using a highly selective wet recess etching process.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; semiconductor device noise; 0.25 micron; 0.46 dB; 10 V; 12 GHz; 13 dB; 160 micron; 320 mS/mm; InGaP gated PHEMT device; InGaP-InGaAs-GaAs; InGaP/InGaAs/GaAs PHEMT; drain-to-gate breakdown; high gain operation; high uniformity; highly selective wet recess etching process; low noise device; microwave device applications; pseudomorphic HEMT; super low noise performance; Breakdown voltage; Gain measurement; Gallium arsenide; Indium gallium arsenide; Noise figure; Noise measurement; PHEMTs; Threshold voltage; Transconductance; Wet etching;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964386
