Title :
InP and GaAs components for 40 Gbps applications
Author :
Streit, D. ; Lai, R. ; Gutierrez-Aitken, A. ; Siddiqui, M. ; Allen, B. ; Chau, A. ; Beale, W. ; Oki, A.
Author_Institution :
Velocium, El Segundo, CA, USA
Abstract :
We have developed a number of products for 40 Gbps applications, including GaAs and InP HEMT modulator drivers, InP-based monolithically integrated PIN-TIA circuits, InP double heterojunction HBT TIAs, and high responsivity dual-absorption PIN diodes. A number of other products are currently in development, including a number of InP DHBT digital circuits.
Keywords :
HEMT integrated circuits; III-V semiconductors; bipolar integrated circuits; digital communication; driver circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated circuit reliability; integrated optoelectronics; optical communication equipment; p-i-n photodiodes; photodetectors; wideband amplifiers; 40 Gbit/s; DHBT TIAs; DHBT digital circuits; GaAs; GaAs components; HEMT modulator drivers; InP; InP components; PHEMT distributed amplifier; double heterojunction bipolar transistors; dual-absorption PIN diodes; high responsivity PIN diodes; monolithically integrated PIN-TIA circuits; transimpedance amplifiers; Bandwidth; Distributed amplifiers; Driver circuits; Gain; Gallium arsenide; HEMTs; Indium phosphide; Optical amplifiers; Power amplifiers; Power generation;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964387
