• DocumentCode
    1865323
  • Title

    Suspended microstructures made using silicon migration

  • Author

    Kant, R. ; Ziaei-Moayyed, M. ; Howe, R.T.

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2009
  • fDate
    21-25 June 2009
  • Firstpage
    1091
  • Lastpage
    1094
  • Abstract
    We demonstrate a new approach for large area releases in single crystal silicon without the use of traditional undercutting-based etches. Our approach uses silicon migration to create suspended microstructures by transforming periodic array of trenches into a continuous void under the silicon surface. We show close agreement between simulation of the silicon migration phenomenon and fabrication results, and demonstrate the viability for creating large released microstructures and micro-fluidic devices.
  • Keywords
    crystal microstructure; elemental semiconductors; microfluidics; silicon; voids (solid); Si; continuous void; microfluidic devices; migration phenomenon; suspended microstructures; transforming periodic array; undercutting-based etches; Annealing; Biomembranes; Etching; Fabrication; Hydrogen; Microstructure; Resists; Shape; Silicon; Vents; large area release; silicon migration; simulation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
  • Conference_Location
    Denver, CO
  • Print_ISBN
    978-1-4244-4190-7
  • Electronic_ISBN
    978-1-4244-4193-8
  • Type

    conf

  • DOI
    10.1109/SENSOR.2009.5285949
  • Filename
    5285949