DocumentCode
1865323
Title
Suspended microstructures made using silicon migration
Author
Kant, R. ; Ziaei-Moayyed, M. ; Howe, R.T.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2009
fDate
21-25 June 2009
Firstpage
1091
Lastpage
1094
Abstract
We demonstrate a new approach for large area releases in single crystal silicon without the use of traditional undercutting-based etches. Our approach uses silicon migration to create suspended microstructures by transforming periodic array of trenches into a continuous void under the silicon surface. We show close agreement between simulation of the silicon migration phenomenon and fabrication results, and demonstrate the viability for creating large released microstructures and micro-fluidic devices.
Keywords
crystal microstructure; elemental semiconductors; microfluidics; silicon; voids (solid); Si; continuous void; microfluidic devices; migration phenomenon; suspended microstructures; transforming periodic array; undercutting-based etches; Annealing; Biomembranes; Etching; Fabrication; Hydrogen; Microstructure; Resists; Shape; Silicon; Vents; large area release; silicon migration; simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location
Denver, CO
Print_ISBN
978-1-4244-4190-7
Electronic_ISBN
978-1-4244-4193-8
Type
conf
DOI
10.1109/SENSOR.2009.5285949
Filename
5285949
Link To Document