Ultra high speed direct digital synthesizer using InP DHBT technology

Author

Gutierrez-Aitken, A. ; Matsui, J. ; Kaneshiro, E. ; Oyama, B. ; Sawdai, D. ; Oki, A. ; Streit, D.

Author_Institution

TRW Space & Electron. Group, Redondo Beach, CA, USA

fYear

2001

fDate

21-24 Oct. 2001

Firstpage

265

Lastpage

268

Abstract

Direct Digital Synthesizers (DDS) offer advantages such as precise beam shaping and forming over conventional RF approaches. This paper discusses novel design and process techniques that enable direct digital synthesis of S-band output frequencies using our current InP double-heterojunction bipolar transistor (DHBT) technology with a cantilevered base layer and undercut collector. The test results demonstrate a DDS chip operating at the world record clock rate of 9.2 GHz. Further design and process improvements will be implemented in future generation circuits that will enable synthesis of Ku-band frequencies.

Keywords

III-V semiconductors; direct digital synthesis; heterojunction bipolar transistors; indium compounds; 9.2 GHz; InP; InP double heterojunction bipolar transistor; RF technology; S-band; beam forming; beam shaping; cantilevered base layer; ultra-high-speed direct digital synthesizer; undercut collector; Bandwidth; Circuit synthesis; Clocks; DH-HEMTs; Frequency synthesizers; Indium phosphide; Linearity; Process design; Radio frequency; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest

Conference_Location

Baltimore, MD, USA

ISSN

1064-7775

Print_ISBN

0-7803-6663-8

Type

conf

DOI

10.1109/GAAS.2001.964391

Filename

964391