DocumentCode :
1865434
Title :
Microwave near-field probes for photovoltaic applications
Author :
Weber, Joel C. ; Bertness, Kris A. ; Schlager, John B. ; Sanford, Norman A. ; Imtiaz, Atif ; Wallis, Thomas M. ; Kabos, Pavel ; Coakley, Kevin J. ; Bright, Victor M. ; Mansfield, Lorelle M.
Author_Institution :
NIST, Boulder, CO, USA
fYear :
2011
fDate :
19-24 June 2011
Abstract :
The photoresponse of three different photovoltaic Cu(In, Ga)Se2 (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values for bulk samples, as well as a preliminary understanding of more complicated multilayer photovoltaics. The spectral dependence of CIGS samples is probed at 405, 635, 808 and 980 nm wavelengths. In addition, we present two-dimensional raster scans that may reveal grain-boundary effects under illumination.
Keywords :
III-V semiconductors; copper compounds; elemental semiconductors; gallium arsenide; grain boundaries; indium compounds; microwave spectroscopy; optical conductivity; silicon; solar cells; Cu(In-Ga)Se2; GaAs; NSMM; Si; grain-boundary effects; light-dependent conductivity values; microwave near-field probes; multilayer photovoltaics; near-field scanning microwave microscopy; photoresponse; photovoltaic applications; two-dimensional raster scans; wavelength 405 nm; wavelength 635 nm; wavelength 808 nm; wavelength 980 nm; Gallium arsenide; Lighting; Microwave imaging; Microwave measurements; Photovoltaic systems; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186341
Filename :
6186341
Link To Document :
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