Microwave near-field probes for photovoltaic applications

Author

Weber, Joel C. ; Bertness, Kris A. ; Schlager, John B. ; Sanford, Norman A. ; Imtiaz, Atif ; Wallis, Thomas M. ; Kabos, Pavel ; Coakley, Kevin J. ; Bright, Victor M. ; Mansfield, Lorelle M.

Author_Institution

NIST, Boulder, CO, USA

fYear

2011

fDate

19-24 June 2011

Abstract

The photoresponse of three different photovoltaic Cu(In, Ga)Se₂ (CIGS) samples as well as GaAs and silicon bulk samples is measured using near-field scanning microwave microscopy (NSMM). Modeling predicts light-dependent conductivity values for bulk samples, as well as a preliminary understanding of more complicated multilayer photovoltaics. The spectral dependence of CIGS samples is probed at 405, 635, 808 and 980 nm wavelengths. In addition, we present two-dimensional raster scans that may reveal grain-boundary effects under illumination.

Keywords

III-V semiconductors; copper compounds; elemental semiconductors; gallium arsenide; grain boundaries; indium compounds; microwave spectroscopy; optical conductivity; silicon; solar cells; Cu(In-Ga)Se₂; GaAs; NSMM; Si; grain-boundary effects; light-dependent conductivity values; microwave near-field probes; multilayer photovoltaics; near-field scanning microwave microscopy; photoresponse; photovoltaic applications; two-dimensional raster scans; wavelength 405 nm; wavelength 635 nm; wavelength 808 nm; wavelength 980 nm; Gallium arsenide; Lighting; Microwave imaging; Microwave measurements; Photovoltaic systems; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186341

Filename

6186341