Title :
Reliability of InGaP/GaAs HBT´s under high current acceleration
Author :
Feng, K.T. ; Runshing, L. ; Canfield, P. ; Wanming Sun
Author_Institution :
Reliability Dept., Conexant Syst. Inc., Newbury Park, CA, USA
Abstract :
The reliability of InGaP/GaAs heterojunction bipolar transistors (HBT´s) under high emitter current density stress has been investigated. The current acceleration of transistor lifetime is modeled as a power law relationship. Over a range of 25kA/cm/sup 2/ to 150 kA/cm/sup 2/, we have extracted a square root dependence of lifetime on current density. These results compare with an approximate square law result measured on AlGaAs HBT´s.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; InGaP-GaAs; InGaP/GaAs heterojunction bipolar transistor; current acceleration; device lifetime; emitter current density; power law; reliability; Acceleration; Circuit testing; Current density; Degradation; Gallium arsenide; Heterojunction bipolar transistors; Packaging; Power system reliability; Stress; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964393
