Study of the properties of ZnO thin films prepared by DC magnetron sputtering

Author

Zhiwei Zhao ; Chen Pan ; Chunxue Gao ; Chao Wang

Author_Institution

Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

ZnO thin films were prepared by reactive DC magnetron sputtering under different working pressures. ZnO thin films prepared at 40% O₂ content in the mixed gases under the working pressure of 1.2 Pa exhibited excellent properties, such as high transmittance, high band-gap energy (3.27 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO thin film transistors.

Keywords

II-VI semiconductors; energy gap; infrared spectra; semiconductor growth; semiconductor thin films; sputter deposition; texture; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; UV-visible-infrared transmittance spectra; ZnO; c-axis preferred orientation; crystallinity; high band gap energy; mixed gases; pressure 1.2 Pa; reactive DC magnetron sputtering; working pressure; zinc oxide thin film transistors; zinc oxide thin films; Absorption; II-VI semiconductor materials; Magnetic films; Photonic band gap; Sputtering; Thin film transistors; Zinc oxide; DC magnetron sputtering; XRD; ZnO thin films; working pressure;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2015 IEEE International

Conference_Location

Beijing

Print_ISBN

978-1-4799-7109-1

Type

conf

DOI

10.1109/IVEC.2015.7224023

Filename

7224023