Title :
Study of the properties of ZnO thin films prepared by DC magnetron sputtering
Author :
Zhiwei Zhao ; Chen Pan ; Chunxue Gao ; Chao Wang
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
ZnO thin films were prepared by reactive DC magnetron sputtering under different working pressures. ZnO thin films prepared at 40% O2 content in the mixed gases under the working pressure of 1.2 Pa exhibited excellent properties, such as high transmittance, high band-gap energy (3.27 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO thin film transistors.
Keywords :
II-VI semiconductors; energy gap; infrared spectra; semiconductor growth; semiconductor thin films; sputter deposition; texture; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; UV-visible-infrared transmittance spectra; ZnO; c-axis preferred orientation; crystallinity; high band gap energy; mixed gases; pressure 1.2 Pa; reactive DC magnetron sputtering; working pressure; zinc oxide thin film transistors; zinc oxide thin films; Absorption; II-VI semiconductor materials; Magnetic films; Photonic band gap; Sputtering; Thin film transistors; Zinc oxide; DC magnetron sputtering; XRD; ZnO thin films; working pressure;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7224023
