Title :
A 14-V/sub pp/ 10 Gbit/s E/O modulator driver IC
Author :
Carroll, J.M. ; Campbell, C.F.
Author_Institution :
TriQuint Semicond. Texas, Richardson, TX, USA
Abstract :
The development of a high voltage, wideband E/O modulator driver IC is described. The DC coupled, single-ended amplifier exhibits a 3 dB-bandwidth of 11.5 GHz, 9.5 dB small signal gain, and 14-V/sub pp/ output voltage swing. The IC utilizes a 0.25 /spl mu/m pHEMT production process and provides sufficient bandwidth and output power for 10 Gbit/s high voltage E/O modulator applications.
Keywords :
HEMT integrated circuits; distributed amplifiers; driver circuits; electro-optical modulation; optical communication equipment; power amplifiers; wideband amplifiers; 0.25 micron; 10 Gbit/s; 11.5 GHz; 14 V; 9.5 dB; DC-coupled single-ended amplifier; bandwidth; high-voltage wideband electro-optic modulator driver IC; output power; output voltage swing; pHEMT production process; small-signal gain; solid-state power distributed amplifier; Application specific integrated circuits; Bandwidth; Broadband amplifiers; Driver circuits; Gain; PHEMTs; Power generation; Production; Voltage; Wideband;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2001. 23rd Annual Technical Digest
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-6663-8
DOI :
10.1109/GAAS.2001.964394
