Title :
Influence of annealing on Co-doped ZnO DMSs thin films synthesized by nanocluster-beam technique
Author :
Zhiwei Zhao ; Xuehua Li
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
Co-doped ZnO thin films fabricated by nanocluster-beam technique were annealed at 200, 400 and 700°C and the influence of temperature has been investigated. AFM images and UV absorbance spectra were carried out. Co-doped ZnO exhibited ferromagnetic at room temperature, and the saturation magnetization of films was also studied following the changing of annealing temperatures.
Keywords :
II-VI semiconductors; annealing; atomic force microscopy; cobalt; ferromagnetic materials; magnetic semiconductors; magnetic thin films; magnetisation; semiconductor growth; semiconductor thin films; ultraviolet spectra; wide band gap semiconductors; zinc compounds; AFM images; DMS thin films; UV absorbance spectra; ZnO:Co; annealing temperatures; ferromagnetic materials; nanocluster-beam technique; saturation magnetization; temperature 200 degC; temperature 293 K to 298 K; temperature 400 degC; temperature 700 degC; Annealing; II-VI semiconductor materials; Magnetic semiconductors; Optical films; Saturation magnetization; Zinc oxide; ZnO thin film; annealing temperature; diluted magnetic semiconductor; nanoclusters;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7224024
