Title :
Effects of sputtering time on the properties of ZnO thin films prepared by magnetron sputtering
Author :
Chen Pan ; Zhiwei Zhao ; Chao Wang
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
ZnO thin films were prepared by reactive DC magnetron sputtering under different growth time. It was found that the ZnO thin films prepared at the sputtering time about 10 minutes exhibited excellent properties, such as high transmittance, high band-gap energy (3.25 eV), and good crystallinity with c-axis preferred orientation, which are benefit for the preparation of ZnO-based thin film transistors.
Keywords :
II-VI semiconductors; energy gap; infrared spectra; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; ZnO; ZnO thin films; band-gap energy; c-axis preferred orientation; crystallinity; reactive DC magnetron sputtering; sputtering time; transmittivity; II-VI semiconductor materials; Magnetic films; Magnetic resonance imaging; Photonic band gap; Sputtering; X-ray diffraction; Zinc oxide; DC magnetron sputtering; XRD; ZnO thin films; sputtering times;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7224025
