Title :
Impacts of O2 content on the properties of ZnO thin films prepared by magnetron sputtering
Author :
Chen Pan ; Zhiwei Zhao ; Chao Wang
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
A series of experiments for ZnO thin films were made by reactive DC magnetron sputtering different oxygen content in mixed gases. ZnO thin films prepared at 40% O2 content exhibited excellent properties, such as high transmittance, high band-gap energy. These features are benefit for the preparation of ZnO thin film transistors.
Keywords :
II-VI semiconductors; energy gap; infrared spectra; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; ZnO; band-gap energy; oxygen content; reactive DC magnetron sputtering; thin film transistors; transmittance; Gases; II-VI semiconductor materials; Magnetic films; Sputtering; X-ray diffraction; X-ray scattering; Zinc oxide; DC magnetron sputtering; O2 content; XRD; ZnO thin films;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7224026
