• DocumentCode
    1865987
  • Title

    Mixture gas permeation model for stored VED

  • Author

    Huiyu Yuan ; Jin Zhang ; Jiajia Ouyang ; Jun Zhou ; Xing Sheng ; Xiaohan Sun

  • Author_Institution
    Res. Center for Electron. Device & Syst. Reliability, Southeast Univ., Nanjing, China
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A permeation theoretical model is proposed based on competitive adsorption for estimating the permeation effect on the stored vacuum electronic devices (VED) surrounded by mixture gases, in which the parameters are determined by experimental results. The life expectation that the pressure inside a stored VED rises to the critical value, induced by permeation, is also set up based on the model. As an example, a VED stored over 20 years in surrounding of mixture gases is used to validate the model. The life expectation for the VED simulated by the model is about 42 years which is more consistent with the actual result than that by two conventional formulas. Obviously, the model proposed is suitable to estimate the permeation effect on the stored VED.
  • Keywords
    gas mixtures; vacuum microelectronics; mixture gas permeation model; stored VED; stored vacuum electronic devices; Adsorption; Atmospheric modeling; Copper; Hydrogen; Iron; Nitrogen; VED; permeation rate; residual gas; storage life;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference (IVEC), 2015 IEEE International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7109-1
  • Type

    conf

  • DOI
    10.1109/IVEC.2015.7224045
  • Filename
    7224045