An empirical study of the effect of well number and waveguide width on the temperature sensitivity of short wavelength GaInP-AlGaInP quantum-well lasers

Author

Wagner, Wolfgang ; Winterhoff, R. ; Scholz, F. ; Schweizer, H.

Author_Institution

Phys. Inst., Stuttgart Univ., Germany

fYear

1999

fDate

28-28 May 1999

Firstpage

200

Abstract

Summary form only given. The results of an empirical study of the temperature sensitivity of threshold current and external quantum efficiency are presented. The well number and the width of the waveguide region were varied with a series of devices to ensure the statistical validity of the data. A simple model is used to relate the experimental data we obtained by measurements under pulsed conditions (1% DC) to CW conditions far above threshold current.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; sensitivity; waveguide lasers; CW conditions; GaInP-AlGaInP; GaInP-AlGaInP quantum-well lasers; external quantum efficiency; pulsed conditions; short wavelength; statistical validity; temperature sensitivity; threshold current; waveguide region; waveguide width; well number; Diode lasers; Optical resonators; Optical waveguides; Pulse measurements; Quantum well devices; Quantum well lasers; Temperature sensors; Thermal factors; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.834080

Filename

834080