Determination of electron-hole transport in InGaN QW heterostructures by near-field optical microscopy

Summary form only given. All-optical methods can be very useful for transport measurements of excess carriers in semiconductor structures. Application of these methods becomes problematic, however, when diffusion lengths become shorter than the light wavelength. To overcome this limit, we have adapted near-field optical methods to investigate electron-hole diffusion and recombination InGaN and GaN QW light emitting heterostructures. One particular motivation was on establishing a correlation between the complex crystalline microstructure of the nonrandom InGaN alloy and the optimal QW design/growth parameters for laser devices.