A novel base drive circuit for accurate measurement and modeling of high-speed power bipolar transistors

Author

Trivedi, M. ; Evazians, R. ; Shenai, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

1

fYear

1998

fDate

18-21 May 1998

Firstpage

511

Abstract

Accurate model development for bipolar transistors requires test circuits for reliable characterization of the device. Dynamic performance of bipolar transistors is studied by switching the base current through the device under specified load conditions. An all-MOSFET base drive circuit is proposed for abrupt switching of base current. The circuit operates on a dual power supply, and features easily adjustable forward and reverse base currents, with abrupt transition

Keywords

driver circuits; field effect transistor switches; power bipolar transistors; semiconductor device models; semiconductor device testing; MOSFET; bipolar transistors; drive circuit; dual power supply; dynamic performance; high-speed power bipolar transistors; modeling; switching; transition; Bipolar transistors; Circuit synthesis; Circuit testing; Mirrors; Power measurement; Power supplies; Power transistors; Switches; Switching circuits; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE

Conference_Location

St. Paul, MN

ISSN

1091-5281

Print_ISBN

0-7803-4797-8

Type

conf

DOI

10.1109/IMTC.1998.679840

Filename

679840