Title :
A novel base drive circuit for accurate measurement and modeling of high-speed power bipolar transistors
Author :
Trivedi, M. ; Evazians, R. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
Accurate model development for bipolar transistors requires test circuits for reliable characterization of the device. Dynamic performance of bipolar transistors is studied by switching the base current through the device under specified load conditions. An all-MOSFET base drive circuit is proposed for abrupt switching of base current. The circuit operates on a dual power supply, and features easily adjustable forward and reverse base currents, with abrupt transition
Keywords :
driver circuits; field effect transistor switches; power bipolar transistors; semiconductor device models; semiconductor device testing; MOSFET; bipolar transistors; drive circuit; dual power supply; dynamic performance; high-speed power bipolar transistors; modeling; switching; transition; Bipolar transistors; Circuit synthesis; Circuit testing; Mirrors; Power measurement; Power supplies; Power transistors; Switches; Switching circuits; Switching loss;
Conference_Titel :
Instrumentation and Measurement Technology Conference, 1998. IMTC/98. Conference Proceedings. IEEE
Conference_Location :
St. Paul, MN
Print_ISBN :
0-7803-4797-8
DOI :
10.1109/IMTC.1998.679840
