Title :
Design limitations for InGaN/AlGaN/GaN lasers imposed by resonant mode coupling
Author :
Smolyakov, G.A. ; Eliseev, P.G. ; Osinski, M.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. Present-day InGaN-AlGaN-GaN semiconductor lasers typically contain a multiple optical waveguide structure, with refractive indices of several layers (GaN buffer-substrate, active region, cap layer) higher than those of cladding layers. This leads to complex behavior of optical modes. Here, we show that resonant effects in nitride lasers result from coupling between nearly-degenerate normal modes of the entire laser structure, similarly to the case of InGaAs-based lasers analyzed previously. We also demonstrate the strong role of the parasitic waveguide thicknesses, in addition to previously investigated parameters.
Keywords :
III-V semiconductors; aluminium compounds; claddings; gallium compounds; indium compounds; laser modes; optical design techniques; quantum well lasers; waveguide lasers; GaN buffer-substrate; InGaN-AlGaN-GaN; InGaN-AlGaN-GaN semiconductor laser design limitations; active region; cap layer; cladding layers; laser structure; multiple optical waveguide structure; nearly-degenerate normal modes; nitride lasers; optical modes; parasitic waveguide thicknesses; refractive indices; resonant effects; resonant mode coupling; Aluminum gallium nitride; Gallium nitride; Laser modes; Optical buffering; Optical design; Optical refraction; Optical waveguides; Resonance; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.834084
