Title :
Novel plasma enhanced atomic layer deposition technology for high-k capacitor with EOT of 8 /spl Aring/ on conventional metal electrode
Author :
Seok-Jun Won ; Yong-Kuk Jeong ; Dae-Jin Kwon ; Moon-Han Park ; Ho-Kyu Kang ; Kwang-Pyuk Suh ; Hong-Ki Kim ; Jae-Hwan Ka ; Kwan-Young Yun ; Duck-Hyung Lee ; Dae-Youn Kim ; Yong-Min Yoo ; Choon-Soo Lee
Author_Institution :
Syst.-LSI Div., Samsung Electron. Co. Ltd., Yongin, South Korea
Abstract :
We have developed a plasma enhanced atomic layer deposition(PEALD) technology for high-k dielectrics such as Al/sub 2/O/sub 3/,Ta/sub 2/O/sub 5/ and HfO/sub 2/. Film quality and throughput of PEALD are far superior to that of ALD which has been spotlighted as a deposition technology for next generation semiconductor devices. We have obtained a extremely low equivalent oxide thickness(EOT) of 8 /spl Aring/ from HfO/sub 2/ film, which has not been reported in conventional metal-based memory capacitors up to now. It was confirmed that PEALD-Al/sub 2/O/sub 3/ and Ta/sub 2/O/sub 5/ films are superior to those using any other deposition techniques and very useful as System-on-Chip(SoC) capacitors.
Keywords :
alumina; atomic layer deposition; dielectric materials; dielectric thin films; hafnium compounds; plasma materials processing; tantalum compounds; thin film capacitors; 8 /spl Aring/; Al/sub 2/O/sub 3/; HfO/sub 2/; SoC; Ta/sub 2/O/sub 5/; capacitor; conventional metal electrode; equivalent oxide thickness; metal based memory capacitors; plasma enhanced atomic layer deposition; semiconductor devices; system-on-chip capacitors; Atomic layer deposition; Capacitors; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Plasmas; Semiconductor devices; Semiconductor films; Throughput;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221067
