Title :
Investigation of the 22 inch hot zone simulation and experiment of the CZ silicon crystal growth process
Author :
Chung, Wen-Tai ; Wu, Yu-Hou ; Chen, Yu-Chung ; Wu, Chih-Hsyong
Author_Institution :
Motech Ind., Inc., Tainan, Taiwan
Abstract :
The thermo-fluid dynamics of Czochralski (CZ) process for growing 8-inch boron-doped solar grade (SG) ingots is investigated. The thermo-fluid field with argon gas and a silicon melt in a 22-inch hot zone was simulated using CGSim software. The crystallization interface deforms during the CZ process due to crystal pulling and crystal length variant. The results showed that the crystalline front is wavy at a body length of 150 mm and that the pulling speed is 0.8 mm/min. The simulation results are in agreement with the experimental results. The simulated thermo-fluid field of 95 kg poly silicon charge was compared with that of 48 kg poly silicon charge.
Keywords :
crystal growth; crystallisation; elemental semiconductors; flow simulation; fluid dynamics; ingots; silicon; solar cells; CGSim software; CZ crystal growth processing; Czochralski crystal growth processing; SG ingot; Si; crystal length variant; crystal pulling; crystallization interface deformation; hot zone simulation; mass 48 kg; mass 95 kg; polysilicon charge; size 150 mm; size 22 inch; size 8 inch; solar grade ingot; thermofluid dynamic simulation; Argon; Computational modeling; Crystals; Furnaces; Shape; Silicon; Simulation;
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
Print_ISBN :
978-1-4244-9966-3
DOI :
10.1109/PVSC.2011.6186379
