Title :
Silicon nitride trap memory with double tunnel junction
Author :
Ohba, R. ; Sugiyama, N. ; Koga, J. ; Fujita, S.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
It is shown that a novel SiN trap memory, which has double tunnel oxides separated by Si nano-crystalline layer, retains signal charge almost completely, keeping high-speed w/e in low w/e voltage. It is proposed that double junction SiN memory with ultra-thin tunnel oxides and ultra-thin SiN is very promising for future memory.
Keywords :
nanostructured materials; random-access storage; silicon compounds; Si nanocrystalline layer; SiN; double tunnel junction; silicon nitride trap memory; ultrathin tunnel oxides; write/erase voltage; Annealing; Crystallization; Energy barrier; Facsimile; Laboratories; Large scale integration; Nonvolatile memory; SONOS devices; Silicon compounds; Voltage;
Conference_Titel :
VLSI Technology, 2003. Digest of Technical Papers. 2003 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-033-X
DOI :
10.1109/VLSIT.2003.1221073
