DocumentCode :
1866453
Title :
Effects of impurities concentration on the efficiency of solar cells manufactured with upgrade metallurgical silicon
Author :
Côrtes, A. D S ; Silva, D.S. ; Viana, G.A. ; Motta, E.F. ; Zampieri, P.R. ; Marques, F.C. ; Mei, P.R.
Author_Institution :
Fac. de Eng. Mec. - FEM, Univ. Estadual de Campinas, Sao Paulo, Brazil
fYear :
2011
fDate :
19-24 June 2011
Abstract :
In this work we reported the production of upgraded metallurgical grade silicon using a combination of different purification techniques, i.e., vacuum degassing, directional solidification and Czochralski growth. Chemical composition, resistivity and efficiency of silicon solar cells are presented. It was observed that those methods have different purification efficiency for different elements. The use of vacuum degassing is demonstrated to be a potential procedure to be used in a combination with other techniques to reduce impurities in metallurgical silicon as well as reduce the final price of the silicon wafers. The combination of vacuum degassing and Czochralski method provided upgraded metallurgical grade silicon. Solar cells efficiency approaching 10% was obtained using this material.
Keywords :
crystal growth from melt; crystal purification; directional solidification; elemental semiconductors; impurities; silicon; solar cells; Czochralski growth; Si; chemical composition; directional solidification; impurities concentration; purification techniques; silicon wafers; solar cells; upgraded metallurgical grade silicon; vacuum degassing; Boron; Conductivity; Impurities; Photovoltaic cells; Purification; Silicon; Vacuum technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186380
Filename :
6186380
Link To Document :
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