Title :
On the distribution of stress-induced voiding failures under vias
Author :
Hall, Gavin D. R. ; Allman, Derryl D. J.
Author_Institution :
Technol. Dev., ON Semicond., Gresham, OR, USA
Abstract :
A physics-of-failure model is derived for the statistics of open-failure mode stress induced voiding (SIV) for vias contacting wide lower metal leads. This model is used to fit long-term, low-temperature data from a 130 nm Cu/low-k BEOL process. Scaling forms are discussed for the temperature acceleration, via chain length, and linewidth. A single void growth model can be used to fit the apparent separate Weibull modes in the data, and for very long chains a three-parameter Weibull is found as a limiting distribution. Monte Carlo integration over the via size is also used to verify the model. The presence of early transient statistics emphasize the practical importance of the sample size and stress testing readout strategy.
Keywords :
Monte Carlo methods; Weibull distribution; copper; integrated circuit interconnections; integrated circuit reliability; low-k dielectric thin films; stress effects; voids (solid); Cu; Monte Carlo integration; SIV; Weibull modes; early transient statistics; low-k BEOL process; open-failure mode; physics-of-failure model; single void growth model; size 130 nm; stress induced voiding; stress testing readout strategy; Data models; High-temperature superconductors; Metals; Reliability; Stress; Thermal stresses; Transient analysis; Copper/low-k; Extreme Value Theory; Grain Boundary Triple Point (GBTP); Grain Size; High Temperature Stress (HTS); Microstructure; Poisson Point Process; Power-law; Self-Similar Scaling; Stress Gradient; Stress Induced Voiding (SIV); Stress Migration (SM); Three Parameter Weibull Distribution; Void Growth; Void Nucleation; Weakest Link;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860581