Title :
Bias dependence of muon-induced single event upsets in 28 nm static random access memories
Author :
Sierawski, Brian D. ; Bhuva, Bharat ; Reed, Robert ; Ishida, K. ; Tam, Nelson ; Hillier, Adrian ; Narasimham, B. ; Trinczek, Michael ; Blackmore, Ewart ; Shi-Jie Wen ; Wong, Rita
Author_Institution :
Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Experiments performed at TRIUMF and the Rutherford Appleton ISIS facility demonstrate the bias dependence of muon-induced single event upsets in delidded 28 nm static random access memories. Increased probability for upset is observed for memories operating at reduced voltages. Fully packaged parts are shown to be suitable to screen for low-energy muon sensitivity.
Keywords :
SRAM chips; muons; radiation hardening (electronics); sensitivity; Rutherford Appleton ISIS facility; TRIUMF; bias dependence; low-energy muon sensitivity; muon-induced single event upsets; size 28 nm; static random access memories; Detectors; Mesons; Protons; Random access memory; Sensitivity; Single event upsets; muons; reliability; single event upset; static random access memories;
Conference_Titel :
Reliability Physics Symposium, 2014 IEEE International
Conference_Location :
Waikoloa, HI
DOI :
10.1109/IRPS.2014.6860585
