• DocumentCode
    186662
  • Title

    Sensitivity analysis of a technique for the extraction of interface trap density in SiC MOSFETs from subthreshold characteristics

  • Author

    Hughart, David R. ; Flicker, J.D. ; Atcitty, S. ; Marinella, Matthew J. ; Kaplar, R.J.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Abstract
    A method for extracting interface trap density (DIT) from subthreshold I-V characteristics is used to analyze data on a SiC MOSFET stressed for thirty minutes at 175°C with a gate bias of -20 V. Without knowing the channel doping, the change in DIT can be calculated when referenced to an energy level correlated with the threshold voltage.
  • Keywords
    MOSFET; interface states; sensitivity analysis; silicon compounds; DIT; MOSFET; SiC; energy level; interface trap density; sensitivity analysis; subthreshold characteristics; temperature 175 degC; threshold voltage; time 30 min; voltage -20 V; Doping; Energy states; MOSFET; Silicon carbide; Stress; Threshold voltage; Transconductance; elevated temperature; interface traps; power electronics; reliability; silicon carbide; subthreshold slope;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 2014 IEEE International
  • Conference_Location
    Waikoloa, HI
  • Type

    conf

  • DOI
    10.1109/IRPS.2014.6860589
  • Filename
    6860589
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=186662